SAHA INSTITUTE OF NUCLEAR PHYSICS
Department of Atomic Energy, Govt. of India
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Surface Physics and Material Science
ARPES         
        
                                                                           
ARPES      ARPES



   
Description A new facility that has been established at Saha Institute of Nuclear Physics (SINP) for detailed surface electronic structure characterization of crystalline materials. ARPES experiments are of vital importance in elucidating the relation between the electronic, magnetic and chemical structure of solid surfaces. This state-of-the-art facility provides high energy and angular resolutions for modern day ARPES measurements and allows different measurements such as Band-Structure Mapping, Fermi-Surface Mapping and Photoelectron Diffraction.
   
Manufacturer PREVAC Sp. zo.o, Poland.
   
Model Custom built, with VG Scienta R4000 WAL analyser and VUV 5000 Scienta UV-source with monochromator
   
Installation place & date Room No. 141 (Old library building)
September 2008.
   
System base pressure 2×10-11 mbar in Analysis and Preparation chambers


Sample size 12 mm × 12 mm (Maximum)

Temperature range LN2 temp to 1200 C (continuous). Flash to 2000 C possible (Max. 1 minute)

Excitation Sources:  
X-ray source Non-monochromatic Al K (1486.7 eV) and Mg Kα (1253.6 eV)
UV source He Iα (21.2eV), He IIα (40.8 eV) (Model VG Scienta VUV5000 coupled with VUV5040 monochromator)
   
Electron Analyser The heart of the ARPES experiment is to measure the kinetic energy of the outgoing electrons at different emission angles. In the analysis chamber, we have a 200 mm concentric hemispherical analyzer (VG Scienta R 4000-WAL) with wide-angle lens for high-resolution and fast ARPES measurements. This is the state-of-the-art 2D analyzer with Multi-channel Plate (MCP)-CCD detector which can map the emission angle of the electrons with their kinetic energy and obtain a direct dispersion images on the screen. The widest angular range possible is ±15° with an angular resolution ~1°; there are other angular ranges ±7° and ±3° with angular resolutions ~ 0.4° and ~0.1° respectively.
   
Ion source PREVAC (Model: IS40C) Beam energy: 200 – 5000 eV depending on the requirement.

UHV cleaver &

Parking chamber
UHV cleaver is to cleave insulating and semiconducting samples, can be heated up to 600 °C in-situ.

Parking chamber is used to store up to 6 samples in-situ.
LEED 8" OCI (Model: LPS 300-D) with W filament and Phosphor screen, Beam Energy: 5-750 eV, Beam Current: 2 μA at 100 eV and 0.5 mm beam size.

Electron -beam evaporator PREVAC (Model: EVB40A), Temperature Range: 300-2300°C, Both material inside crucible and rod shaped material can be evaporated, with water cooling system.

Quartz microbalance MAXTEK (Model:TM400) Frequency resolution: 0.03 Hz, Mass resolution: 0.375 ng/cm2.
   

ARPES

 

Last Updated on Wednesday, 17 August 2016 14:30
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