SAHA INSTITUTE OF NUCLEAR PHYSICS
Department of Atomic Energy, Govt. of India
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Surface Physics and Material Science

Facilities

Molecular Beam Epitaxy (MBE)

Molecular Beam Epitaxy       













    
Molecular Beam Epitaxy
Description        
Molecular beam epitaxy is a technique for epitaxial growth via the interaction of one or several molecular or atomic beams that occurs on a surface of a heated crystalline substrate under ultrahigh-vacuum condition. The emerging SiGe heterostructure technology now offers the possibility of extending the reach of Si MOS technology into areas of high speed and low power which were previously the preserve of III–V and bipolar devices. Epitaxial growth technologies have made the growth of coherent Si/Si1-xGex/Si structures possible, where the in-plane SiGe lattice spacing matches that of Si. There are, however, certain limitations on the SiGe thickness of such a structure and those depend on the Ge concentration in the alloy. Relaxation of misfit stress in elastically strained epitaxial Si/Ge structures leads to the deterioration of interface morphology on a nanometric scale. To characterize a Si/Ge superlattice structure by the determination of the layer thickness and interface quality various methods that are sensitive to deformation of a crystal lattice, Ge content and direct observation of the layer interfaces should be used simultaneously. The controlled fabrication of Si/Ge structures is therefore a daunting challenge and requires extreme precision in the growth parameters.
 
Manufacturer   RIBER (France)
Model   Compact 21
Installation Date   December 2006
Working Pressure   10 (-11) m-bar
Effusion Cells   Low Temperature : 
ABN-135 (Make : Riber) 
used for Ge source 

High Temperature : 
HT-12 (Make : Riber) 

Electron Beam Gun   Make : Telemark 
Model : TT-6 
used for Si source 
Thin Film Deposition Controller   Make : Inficon 
Model : XTC-2 
Residual Gas Analyzer   Make : Hiden Analytical Ltd (UK) 
Molecular Beam Epitaxy   Molecular Beam Epitaxy

 

Last Updated on Wednesday, 17 August 2016 14:10
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