Prof. Satyaban Bhunia

Papers in Journals

1.S. Pal, S. Mukherjee, R. Jangir, M. Nand, D. Jana, S. K. Mandal, S. Bhunia, C. Mukherjee, S. N. Jha, S. K. Ray, “WS2 Nanosheet/Si p–n Heterojunction Diodes for UV–Visible Broadband Photodetection”, ACS Applied Nano Materials, 4, 3241-3251 (2021). 2.“Probing bias and power dependency of high-performance broadband Mg/ZnSnP2/Sn back-to-back Schottky junction photodetectors”, S. Mukherjee, T. Maitra, A. Pradhan, S. Mukherjee, A.Nayak, S.Bhunia, Solar Energy Materials and Solar Cells 208 (2020) 3.“Fast-response symmetric coplanar Ni/AlGaInP/Ni visible photodetector”, T. Maitra, S. Mukherjee, A. Pradhan, S.Mukherjee, A.Nayak, S.Bhunia, Sensors and Actuators A – Physical, 305 (2020) 4.“Carrier transport and recombination dynamics of InAs/GaAs sub-monolayer quantum dot near infrared photodetector” S.Mukherjee, A. Pradhan, T.Maitra, S.Mukherjee, A.Nayak, S.Bhunia, Journal of Physics D – Applied Physics, 52 (2019) 5.“Carrier escape mechanism in laterally correlated InAs sub-monolayer quantum dots using temperature dependent photoluminescence”, S.Mukherjee, A. Pradhan, T.Maitra, S.Mukherjee, A.Nayak, S.Bhunia, Journal of Luminecence, 215 (2019) 116597 6.“Improved spectral and temporal response of MSM photodetectors fabricated on MOCVD grown spontaneous AlGaAs superlattice”, A.Pradhan, S.Mukherjee, T.Maitra, S.Mukherjee, A.Nayak, S.Bhunia, Sensors and Actuators A – Physical, 297 ‏(2019) 111548 7.“InN Nanowires Based Near-Infrared Broadband Optical Detector”, Shyam Murli Manohar Dhar Dwivedi, Avijit Dalal, Anupam Ghosh, Punam Murkute, Hemant Ghadi, Chiranjib Ghosh, Subhananda Chakrabarti, Satyaban Bhunia, Aniruddha Mondal, IEEE Photonics Technology Lett, 31 (2019) 1526 - 1529 8.“Interface intermixing and interdiffusion characteristics in MOVPE grown spontaneous AlxGa1-xAs/GaAs (100) superlattice structures using high resolution X-ray diffraction”, A. Pradhan, S. Mukherjee, T. Maitra, S. Mukherjee, A. Nayak, S. Bhunia, Superlattices and Microstructures 126 (2019) 193–199 9.“Low temperature excitonic spectroscopy study of mechano-synthesized hybrid perovskite”, Priyabrata Sadhukhan, Anway Pradhan, Suman Mukherjee, Payal Sengupta, Atanu Roy, Satyaban Bhunia and Sachindranath Das, Appl. Phys. Lett. 114, 131102 (2019) 10.“Tuning of near infrared excitonic emission from InAs quantum dots by controlling the sub-monolayer coverage”, S. Mukherjee, A. Pradhan, S. Mukherjee, T. Maitra, S. Sengupta, B. Satpati, S. Chakrabarti, A. Nayak, and S. Bhunia, Journal of Luminescence 210 (2019) 311–321 11.“Temperature and excitation dependent ultraviolet lasing in vertically oriented ZnO nanowires”, T. Maitra, A. Pradhan, S. Mukherjee, S. Mukherjee, A. Nayak and S. Bhunia, Journal of Materials Science: Materials in Electronics 30 (2019) 8814 – 8819 https://doi.org/10.1007/s10854-019-01206-2) 12.“Evaluation of spontaneous superlattice ordering in MOCVD grown AlxGa1-xAs epilayer on GaAs (100) using X-ray reflectivity and rocking curve analysis”, T. Maitra, A. Pradhan, S. Mukherjee, S. Mukherjee, A. Nayak, S. Bhunia, Physica E: Low-dimensional Systems and Nanostructures 106 (2019) 357–362 13.“Rapid responsive Mg/ZnSnP2/Sn photodetector for visible to near-infrared application”, S. Mukherjee, T. Maitra, A. Pradhan, S. Mukherjee, G. Manna, S. Bhunia, A. Nayak, Solar Energy Materials and Solar Cells 189 (2019) 181–187 14.“Ultrathin Vapor–Liquid–Solid Grown Titanium Dioxide-II Film on Bulk GaAs Substrates for Advanced Metal–Oxide–Semiconductor Device Applications”, Anindita Das, Basudev Nag Chowdhury, Rajib Saha, Subhrajit Sikdar, Satyaban Bhunia, and Sanatan Chattopadhyay, IEEE Transaction On Electron Devices, Vol. 65, No. 4, April 2018 15.“Oblique angle deposited InN quantum dots array for infrared detection” by Shyam Murli Manohar Dhar Dwivedi, Anupam Ghosh, Hemant Ghadi, Punam Murkute, P. Chinnamuthu, Shubhro Chakrabartty, Subhananda Chakrabarti, Satyaban Bhunia, and  Aniruddha Mondal, J. of Alloys and Compounds, 2018, 766 pp 297-304 16.“Suppression of Ge-based defects and auto-doping of p-type epitaxial GaAs by employing Al0.3Ga0.7As bi-layer buffer”, by G.K. Dalapati, S. Guhathakurata, A. Das, C. Mahata, S. Chakraborty, S. Bhunia, H.L. Seng, S. Chattopadhyay, L.K. Bera, S. Tripathy, J. of Alloys and Compounds 765 (2018) pp 994-1002 17.“Spontaneous superlattice structures in AlxGa1-xAs/GaAs (1 0 0) grown by metalorganic vapor phase epitaxy” by A. Pradhan, T. Maitra, S. Mukherjee, S. Mukherjee, A. Nayak, B. Satpati, S. Bhunia, Materials Letters, 2018, 210 pp. 77–79 18.“Study of thermal stability of spontaneously grown superlattice structures by Metalorganic Vapor Phase epitaxy in AlxGa1-xAs/GaAs heterostructure” by A. Pradhan. T. Maitra, S. Mukherjee, S. Mukherjee, B. Satpati, A. Nayak, and S. Bhunia, AIP Conference Proceedings 1942, 080038 (2018); https://doi.org/10.1063/1.5028872 19.“Growth and characterization of InAs sub-monolayer quantum dots with varying fractional coverage” S. Mukherjee, A. Pradhan, S. Mukherje, T. Maitra, S. Sengupta, S. Chakrabarti, A. Nayak, and S. Bhunia, AIP Conference Proceedings 1942, 080039 (2018); https://doi.org/10.1063/1.5028873 20.“Defect states assisted charge conduction in Au/MoO3–x/n-Si Schottky barrier diode”, Somnath Mahato, Cristobal Voz, Debaleen Biswas, Satyaban Bhunia and Joaquim Puigdollers, Materials Research Express, 6 (2018) 036303 21.“Synthesis of p–n junctions in ZnO nanorods by O+ ion implantation” by Avanendra Singh, K. Senapati, D.P. Datta, R. Singh, T. Somb, S. Bhunia, D. Kanjilal, Pratap K. Sahoo, Nuclear Instruments and Methods in Physics Research B 2017, 409 pp. 143–146 22.“The role of devulcanizing agent for mechanochemical devulcanization of styrene butadiene rubber vulcanizate” by Joyeeta Ghosh, Soumyajit Ghorai, Satyaban Bhunia, Madhusudan Roy, Debapriya De, Ploymer Engg & Sci, 2018, 58(1), pp. 74-85 23.“Investigation of the properties of single-step and double-step grown ZnO nanowires using chemical bath deposition technique” by Somdatta Paul, Avishek Das, Mainak Palit, Satyaban Bhunia, Anupam Karmakar, Sanatan Chattopadhyay, Advanced Materials Letters, 2016, 7(8), pp. 610-615 24.“Phase selective growth of Ge nanocrystalline films by ionized cluster beam deposition technique and photo-oxidation study” by S. Mukherjee, A. Pradhan, T. Maitra, S. Mukherjee, A. Nayak, S. Bhunia, Advanced Materials Letters, 2017, 8(9), pp. 891-896 25.  “Pine shaped InN nanostructure growth via vapour transport method by own shadowing and infrared detection” by Shyam Murli Manohar Dhar Dwivedi, Shubhro Chakrabartty, Hemant Ghadi, Punam Murkute, Vinayak Chavan, Subhananda Chakrabarti, Satyaban Bhunia, Aniruddha Mondal, Journal of Alloys and Compounds 722 (2017) 872-877 26.  “Microstructural and light emission properties of ZnSnP2 thin film absorber: study of native defects”, Arabinda Nayak, Ph.D.; Sukhendu Mukherjee; Tamaghna Maitra; Arabinda Nayak; Suman Mukherjee; Anway Pradhan; Mrinmay, Mukhopadhyay; Biswarup Satpati; Satyaban Bhunia, Materials Chemistry and Physics, 2018 204 pp. 147-153 27.   “Temperature and Excitation Dependent Lasing Characteristics of ZnO Nanorods”, T. Maitra , S. Mukherjee, A. Nayak, A.Pradhan, S. Mukherjee, S. Bhunia, Proceedings of International Symposium on Semiconductor Materials and Devices (accepted for publication) 28.  “Interface characteristics of ZnSnP2/Si heterostructure studied by x-ray reflectivity measurement”, S. Mukherjee, T. Maitra, A. Nayak, A.Pradhan, S. Mukherjee, M, K. Mukhopadhyay, S. Bhunia, Proceedings of International Symposium on Semiconductor Materials and Devices (accepted for publication) 29.  “Observation of Natural Superlattice in AlxGa1-xAs Layers Grown by Metalorganic Vapor Phase Epitaxy”, A. Pradhan, T. Maitra, S. Mukherjee, S. Mukherjee, A. Nayak, B.Satpati and S. Bhunia, AIP Conference Proceedings 1728, 020243 (2016); doi: 10.1063/1.4946294 30.  “Growth and characterization of cubic and non-cubic Ge nanocrystals,” S. Mukherjee, A. Pradhan, S. Mukherjee, T. Maitra, A. Nayak, and S. Bhunia, AIP Conference Proceedings 1728, 020111 (2016); http://doi.org/10.1063/1.4946162 31.  “Mechanochemical devulcanization of natural rubber vulcanizate by dual function disulfide chemicals” by Soumyajit Ghorai, Satyaban Bhunia, Madhusudan Roy and Debapriya De, Polymer Degradation and Stability (Elsevier) (Under Review). 32.  “Influence of processing parameters on mechanochemical devulcanization of sulfur cured styrene butadiene rubber by dual function disulfide chemicals” by Soumyajit Ghorai, Joyeeta Ghosh, Satyaban Bhunia, Madhusudan Roy and Debapriya De, Materials & Design (Elsevier) (Under Review). 33.  “Determination of silica content and its dispersion in NR-PBR-RR ternary blends/ SiO2 nanocomposites by digital image analysis of SEM images” by Debapriya De, Soumik Kundu, Premananda Jana, Satyaban Bhunia and Madhusudan Roy, Polymer Composites (Wiley Interscience), Article first published online: 2 SEP 2015, DOI: 10.1002/pc.23780. 34.  “Effect of sol-gel-derived nano-silica on the properties of natural rubber-poly butadiene rubber-reclaim rubber ternary blends-silica nanocomposites”, D. De, P.K. Panda, S. Bhunia, M. Roy, Polymer-Plastics Technology and Engineering, Vol 53, pages 1131–1141, Year 2014, DOI 10.1080/03602559.2014.886117 35.  “Microstructure and dielectric functions of Ge nanocrystals embedded between amorphous Al2O3 films: study of confinement and disorder”, A. Nayak and S. Bhunia, Journal of Experimental Nanoscience, Vol 9, pages 463-474, Year 2014 36.   “Synthesis of SiGe layered structure in single crystalline Ge substrate by low energy Si ion implantation,” S.A. Mollick, D. Ghose , S.R. Bhattacharyya, S. Bhunia, N.R. Ray, M. Ranjan, VACUUM Volume 101 Pages  387 – 393 Published 2014 37. “Reinforcing effect of reclaim rubber on natural rubber/polybutadiene rubber blends”, De, Debapriya; Panda, Prabir Kr.; Roy, Madhusudan; et al., MATERIALS & DESIGN  Volume: 46   Pages: 142-150   DOI: 10.1016/j.matdes.2012.10.014   Published: APR 2013 38.  “Super rapid response of humidity sensor based on MOCVD grown ZnO nanotips array”, Biswas, Pranab; Kundu, Souvik; Banerji, P.; et al., SENSORS AND ACTUATORS B-CHEMICAL  Volume: 178   Pages: 331-338   DOI: 10.1016/j.snb.2012.12.116   Published: MAR 1 2013 39.  “Reinforcing effect of nanosilica on the properties of natural rubber/reclaimed ground rubber tire vulcanizates”, De, Debapriya; Panda, Prabir Kr; Roy, Madhusudan; et al., POLYMER ENGINEERING AND SCIENCE  Volume: 53   Issue: 2   Pages: 227-237   DOI: 10.1002/pen.23255   Published: FEB 2013 40.  “Reduced Graphene Oxide/Ethylene Vinyl Acetate Co-polymer Composite with Improved Thermal Stability and Flame Retardancy”, Nandi, Debabrata; Talukdar, Atanu; Ghosh, Uday Chand; S. Bhunia, JOURNAL OF POLYMER MATERIALS  Volume: 29   Issue: 4   Pages: 411-421   Published: OCT-DEC 2012 41.  “ The Effect of Nano-silica on natural rubber-reclaim rubber vulcanizates”, Debapriya De, Prabir Kr. Panda, Madhusudan Roy, Satyaban Bhunia, and Abu Ismail Jaman, Plastic Research Online, 2012 “Vertically aligned ZnO nanorod grown by hydrothermal based chemical method on glass substrate” R. Srivastava, S. Majumdar, and S. Bhunia, AIP Conf. Proc. 1447, 421 (2012) 43.“Strong temperature and substrate effect on ZnO nanorod flower structures in modified chemical vapor condensation growth” S.R. Haldar, A. Nayak, T.K. Chini, and S. Bhunia, Curr. Appl. Phys 10 (2010) pp. 942 - 946 44.“Vapor condensation growth and evolution mechanism of ZnO nanorod flower structures” S. R. Haldar, A. Nayak, T. K. Chini, S. K. Ray, N. Yamamoto, and S. Bhunia, Physica Status Solidi A,  207 (2) (2010) pp. 364-369 45. “Real-time observation of epitaxial crystal growth in gaseous environment using x-ray diffraction and x-ray reflectometry”, T. Kawamura, S. Fujikawa, S. Bhunia, Y. Watanabe, J. Jap. Soc. Synchrotron Rad. Res. 21 (2008) pp. 252 – 261 (In Japanese) 46.“Photoluminescence studies on porous silicon/polymer heterostructure” J.K. Mishra, S. Bhunia, S. Banerjee, P. Banerji, Journal of Luminescence 128 (2008) 1169–1174 47. “Real-time observation of formation of Indium Phosphide nanowires by means of GISAXS”, T. Kawamura, S. Bhunia, S. Fujikawa, Y. Watanabe, J. Matsui, Y. Kagoshima, Y. Tsusaka, Journal of Physics: Conference Series 83 (2007) 012035 48.“Temperature and wavelength dependence of transient photoconductivity in ZnTe” S. Johnston, R.K. Ahrenkiel, S. Bhunia, and D.N. Bose, Ind. J. Phys. 80 (2006) pp. 703 – 706 49.“Polarized cathodoluminescence study of InP nanowires by transmission electron microscopy” N. Yamamoto, S. Bhunia, and Y. Watanabe, Appl. Phys. Lett. 88 (2006) 153106 – 153108 50.“High resistivity In-doped ZnTe: electrical and optical properties” D.N. Bose and S. Bhunia, Bull. Mater. Sci. 28 (2005) pp. 647 – 650 51.“High resolution x-ray diffraction analysis of epitaxially grown indium phosphide nanowires”, T. Kawamura, S. Bhunia, Y. Watanabe, S. Fujikawa, J. Matsui, Y. Kagoshima, and Y. Tsusaka, J. Appl. Phys. 97 (2005)  084318 52.“Real-time observation of fractional-order x-ray reflection profiles of InP(001) during step-flow growth” Seiji Fujikawa, Tomoaki Kawamura, Satyaban Bhunia, Yoshio Watanabe, Kenshi Tokushima, Yoshiyuki Tsusaka, Yasushi Kagoshima, and Junji Matsui, Jap. J. Appl. Phys. 44 (2005) pp. L144 – L146 53.“X-ray diffraction analysis of semiconductor nanowires”, T. Kawamura, S. Bhunia, S. Fujikawa, and Y. Watanabe, J. Jap. Soc. Synchrotron Rad. Res. 18 (2005) pp. 192 – 199 (In Japanese) 54.“Real-time x-ray diffraction studies of surface structure during metalorganic chemical vapor deposition”, Y. Watanabe, T. Kawamura, S. Bhunia, and S. Fujikawa, J. Jap. Phys. Soc. 73 (no.5) (2004) pp. 620 – 623 (In Japanese) 55. “Vapor-liquid-solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy”, S. Bhunia, T. Kawamura, S. Fujikawa, H. Nakashima, K. Furukawa, K. Torimitsu, and Y. Watanabe, Thin Solid Films 464-465 (2004) pp. 244-247 56. “Heteroepitaxial metalorganic vapor phase epitaxial growth of InP nanowires on GaP(111)B”, Y. Watanabe, S. Bhunia, S. Fujikawa, T. Kawamura, H. Nakashima, K. Furukawa, and K. Torimitsu, Thin Solid Films 464-465 (2004) pp. 248-250 57. “Structural and optical properties of vertically aligned InP nanowires grown by metalorganic vapor phase epitaxy”, Y. Watanabe, N. Yamamoto, S. Bhunia, T. Kawamura, and S. Fujikawa, Physica E 23 (2004) pp. 305-308   58. “Systematic investigation of growth of InP nanowires by metalorganic vapor-phase epitaxy”, S. Bhunia, T. Kawamura, S. Fujikawa, and Y. Watanabe, Physica E 24 (2004) pp. 138-142 59. “Site-controlled InP nanowires grown on patterned Si substrates”, Y. Watanabe, H. Hibino, S. Bhunia, K. Tateno, and T. Sekiguchi, Physica E 24 (2004) pp. 133-137 60. 60. “Metal organic vapor phase epitaxial growth and properties of isolated and vertically aligned InP nanowires” S. Bhunia, T. Kawamura, Y. Watanabe, S. Fujikawa and K. Tokushima, Appl. Phys. Lett. 83 (2003) pp. 3371 – 3373 61. “Free-standing and vertically aligned InP nanowires grown by metal organic vapor phase epitaxy”, S. Bhunia, T. Kawamura, S. Fujikawa, K. Tokushima, and Y. Watanabe Physica E 21 (2004) 583 - 587 62.“Optical and structural properties of InP nanowires grown under vapor-liquid-solid mechanism by using metal organic vapor phase epitaxy”, S. Bhunia, T. Kawamura, S. Fujikawa, K. Tokushima, and Y. Watanabe, IEEE Conf. Proc., IEEE-Nano2003, Vol.1 (2003) pp. 136 – 139. 63. “Evaluation of size and its distribution of InP nanowires using small angle X-ray scattering and X-ray diffraction at the grazing condition” T. Kawamura, S. Bhunia, Y. Watanabe, S. Fujikawa, K. Tokushima, J. Matsui, Y. Kagoshima, Y. Tsusaka, IEEE Conf. Proc., IEEE-Nano2003, Vol.1 (2003) pp. 671 - 673 64.“Real-time measurement of rocking curves during the MOVPE growth of GaInP/GaAs” S. Bhunia, T. Kawamura, S. Fujikawa, Y. Watanabe, K.Uchida, N. Sugiyama, M. Furiya, S. Nozaki, H. Morisaki, J. Matsui, Y. Kagoshima, Y. Tsusaka, Applied Surface Science 216 (2003) 382-387 65.“In-situ observation of step-terrace structures on MOVPE grown InP (001) by using grazing x-ray scattering”, T. Kawamura, S. Bhunia, Y. Watanabe, S. Fujikawa, J. Matsui, Y. Kagoshima, Y. Tsusaka, Applied Surface Science 216 (2003) 361-364 66.“MOVPE growth of heavily carbon doped GaAs by using a new dopant source of CCl3Br and quantitative analysis of compensation mechanism in the epilayers”, S. Bhunia, K. Uchida, S. Nozaki, N. Sugiyama, M. Furiya, and H. Morisaki, J. Appl. Phys. 39 (2003) 1613-1619 67.“Heavy carbon doping of GaAs by MOVPE using a new dopant source CBrCl3 and characterization of the epilayers” K. Uchida, S. Bhunia, N. Sugiyama, M. Furiya, M. Katoh, S. Katoh, S. Nozaki and H. Morisaki, J. Cryst. Growth 248 (2003) 124-129 68.“Real-time observation of step-flow limited metal organic vapor phase epitaxial growth of InP and their characteristics”, S. Bhunia, T. Kawamura, Y. Watanabe, S. Fujikawa, K. Uchida, S. Nozaki, H. Morisaki, J. Matsui, Y. Kagoshima, and Y. Tsusaka, Inst. Phys. Conf. Ser. No. 170, Ch. 8, pp 647 - 652 69.“Real time observation of surface morphology of indium phosphide MOVPE growth with using x-ray reflectivity technique”, T. Kawamura, Y. Watanabe, S. Fujikawa, S. Bhunia, K. Uchida, J. Matsui, Y. Kagoshima and Y. Tsusaka, J. Cryst. Growth 237-239 (2002) pp 398 – 402 70."Real-time observation of surface morphology at nanometer scale with using x-ray specular reflection", T. Kawamura, Y. Watanabe, S. Fujikawa, S. Bhunia, K. Uchida, J. Matsui, Y. Kagoshima and Y. Tsusaka, J. Surface and Interface Analysis 35 (2003) 72-75 71.“Determination of well widths in a MOVPE-grown InGaAs/InP multi-quantum well structure using SIMS and photoluminescence”, D. N. Bose, P. Banerji, S. Bhunia, Y. Aparna, M. B. Chhetri and B. R. Chakraborty, Applied Surface Science, Vol 158 (2000), pp16-20 72.“Optimization of growth of InGaAs/InP quantum wells using photoluminescence and secondary ion mass spectrometry”, S. Bhunia, P. Banerji, T.K. Chaudhuri, A.R. Haldar, D.N. Bose, Y. Aparna, M.B. Chettri and B.R. Chakraborty, Bull. Mat. Sc., Vol. 23 (2000) pp 207 – 210 73.“Schottky barrier studies on single crystal ZnTe and determination of interface index”, S. Bhunia and D.N. Bose, J. Appl. Phys. Vol 87 (2000) pp 2931-2935 74.“Steady state and time resolved photoconductivity measurements of minority carrier lifetime in ZnTe”, D.N. Bose, R.K. Ahrenkiel and S. Bhunia, J. Appl. Phys. Vol 86 (1999) pp. 6599-6601 75.“Microwave synthesis, single crystal growth and characterization of ZnTe”, S. Bhunia and D.N. Bose, J. Cryst. Growth Vol. 186 (1998) pp.535-542 76.“Behavior of deep defects after hydrogen passivation in ZnTe studied by photoluminescence and photoconductivity”, S.Bhunia and D.N. Bose, MRS Conf. Proc. Vol 510 (1998) p.331 77.“Photoluminescence and Photoconductivity studies of hydrogen passivated  ZnTe”, S. Bhunia, D. Pal and D.N. Bose, Semicond. Sci. & Technol, Vol.13 (1998) p. 1434 – 38 78.“Pulsed laser deposition of ZnTe films”, S.Bhunia, P.Bhattacharya and D.N.Bose, Materials Letters, Vol. 27 (1996) pp.307-311 79.“Photoluminescence study of hydrogen passivation of ZnTe”, S.Bhunia, D. Pal and D. N. Bose, Diffusion and Defect Data Pt. B: Solid State Phenomena, Vol. 55 (1997) pp. 47-50 80.“ZnTe single crystal growth photoluminescence and laser ablation studies”, S. Bhunia and D.N. Bose, Diffusion and Defect Data Pt. B: Solid State Phenomena, Vol. 55 (1997) pp.43-46 81.“Crytal growth and application of II-VI compound semiconductors”, S. Bhunia and D.N. Bose, (review article), Proc. INSA, Part A, 64 (1998) p. 211-223 82.“Fabrication of GaSb/ZnTe heterojunctions by pulsed laser deposition”, P. Banerji, S. Bhunia and D.N. Bose, Proceedings of SPIE - The International Society for Optical Engineering, Volume 3975 (I), 2000, Pages 212-214 83. “Photoluminescence and Raman studies of silicon ion implantation annealing in GaAs”, S. Sripad, S. Bhunia et. al. Proceedings of SPIE - The International Society for Optical Engineering, Volume 3975 (I), 2000, Pages 287-290   84.“Steady –state and time-resolved photoconductivity measurements of minority carrier lifetime in ZnTe”, D.N. Bose, S. Johnston, R.K. Ahrenkiel and S. Bhunia, Proceedings of SPIE - The International Society for Optical Engineering, Volume 3975 (I), 2000, Pages 1349-1352 85.“Microwave synthesis, growth and characterization of ZnTe”, Proceedings of SPIE - The International Society for Optical Engineering, Volume 3316 (I), 1998, Pages 158 – 161 86.“OMVPE Growth of  III - V Compounds and Ternary Alloys for Opto-Electronics”, D.N.Bose, P. Bhattacharya, A. Kumar, D. Pal and S. Bhunia, Semiconductor Devices, Edited by Krishan Lal, Narosa Publishing House, 1997, p. 307 87.“Optimization of implantation annealing in GaAs for MESFET fabrication”, S. Sripad, S. Bhunia, D.N. Bose and K. C. Kumar, Computers and Devices for Communication, Ed. S. Dhar and A.K. Dasgupta, Allied Publisher Ltd., India, p. – 368   Papers presented in international conferences “Growth and optical properties of vertically well aligned ZnO nanowire bundles grown on sapphire (0001) substrate” S. R. Haldar and S. Bhunia, Proceedings of the 53rd DAE Solid State Physics Symposium (2008), 16-20 Dec., BARC, Mumbai  “Growth and characterization of novel flower-like ZnO nanostructures via atmospheric pressure chemical vapour deposition technique” S. R. Haldar and S. Bhunia, Proceedings of the 52nd DAE Solid State Physics Symposium (2007), 27-31 Dec., Univ. of Mysore  “Vertically oriented InP nanowires grown by metalorganic vapor phase epitaxy”, S. Bhunia, T. Kawamura, Y. Watanabe, and S. Fujikawa, 13th Int. Conf. on Metalorganic Vapor Phase Epitaxy, Miyazaki, Japan, May 22 – 26, 2006 “Growth and characterization of vertically aligned InP nanowires grown on semiconductor substrates”, Y. Watanabe, S. Bhunia, T. Kawamura, S. Fujikawa, and N. Yamamoto, Proc. Int. Workshop on Phys. of Semicond. Devices, Chennai, Dec 2003 “Vapor-liquid-solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy”, S. Bhunia, T. Kawamura, S. Fujikawa, H. Nakashima, K. Furukawa, K. Torimitsu, and Y. Watanabe, Atomically Controlled Surface, Interface, and Nanostructures – 7, Nov 16 – 21, Nara, Japan “Systematic investigation of growth of III-V compound nanowires by metalorganic vapor-phase epitaxy”, S. Bhunia, T. Kawamura, S. Fujikawa, and Y. Watanabe, Functional Semiconductors and Nanosystems, Nov 12 – 14, Atsugi, Japan “Electron microscopic and optical spectroscopic characterization of InP nanowires”, S. Bhunia, T. Kawamura, S. Fujikawa, and Y. Watanabe, NanoSPEC 2003,Oct 21 – 23, Osaka, Japan “Optical and Structural Properties of InP Nanowires Grown Under Vapor-Liquid-Solid Mechanism by Metal Organic Vapor Phase Epitaxy”, S. Bhunia, T. Kawamura, Y. Watanabe, S. Fujikawa, and K. Tokushima, IEEE Nano2003, Aug 12 – 14, San Francisco, USA “Homoepitaxial growth of surface mounted vertical InP nanowires by metal organic chemical vapor deposition”, S. Bhunia, T. Kawamura, Y. Watanabe, S. Fujikawa, K. Tokushima, J. Matsui,Y. Kagoshima, Y. Tsusaka, Jap. Appl. Phys. Soc. Conf., Aug-Sept, 2003, Fukuoka, Japan “Structural and optical properties of InP nanowires grown by metal organic chemical vapor deposition”, S. Bhunia, T. Kawamura, Y. Watanabe, S. Fujikawa, K. Tokushima, J. Matsui,Y. Kagoshima, Y. Tsusaka, ibid “Dependence of InP nanowire growth on semiconducting materials”, Y. Watanabe, S. Bhunia, T. Kawamura, S. Fujikawa, and K. Tokushima, ibid “Characterization of InP nanowires by TEM-CL technique”, N. Yamamoto, Y. Watanabe, S. Bhunia, T. Kawamura, S. Fujikawa, and K. Tokushima, ibid “Heavy carbon doping of GaAs by MOVPE using a new dopant source CBrCl3 and characterization of the epilayers”, K. Uchida, S. Bhunia, N. Sugiyama, M. Furiya, M. Katoh, S. Katoh, S. Nozaki, H. Morisaki, 11th Int. Conf. Metal Organic Vapor Phase Epitaxy (ICMOVPE), June 3-7, 2002, Berlin “Evolution of strain in GaInP/GaAs as a function of temperature measured by in-situ rocking curves using synchrotron x-ray source”, S. Bhunia, T. Kawamura, Y. Watanabe, S. Fujikawa, J. Matsui, Y. Kagoshima and Y. Tsusaka, 29th Int. Symp. on Compound Semiconductors (ISCS), October 7-10, 2002, Lausanne, Switzerland “Real-time measurement of rocking curves during the MOVPE growth of GaInP/GaAs” S. Bhunia, T. Kawamura, S. Fujikawa, Y. Watanabe, K.Uchida, N. Sugiyama, M. Furiya, S. Nozaki, H. Morisaki, J. Matsui, Y. Kagoshima, Y. Tsusaka, 4th Int. Symp. on Control of Semiconductor Interfaces (ISCSI), October 21-25, 2002, Karuizawa, Japan “In-situ study of growth mode by reflection of synchrotron x-ray during the metal organic vapor phase epitaxial growth of InP” S. Bhunia, T. Kawamura, Y. Watanabe, S. Fujikawa, K. Uchida, S. Nozaki, H. Morisaki, J. Matsui, Y. Kagoshima, Y. Tsusaka, 13th Int. Conf. Cryst. Growth, July 30th – Aug.4th, 2001, Kyoto, Japan “Real-time observation of step-flow limited metal organic vapor phase epitaxial growth of InP and their characteristics”, S. Bhunia, T. Kawamura, Y. Watanabe, S. Fujikawa, K. Uchida, S. Nozaki, H. Morisaki, J. Matsui, Y. Kagoshima, Y. Tsusaka, 28th Int. Symp. Compound Semicond., Oct. 1st-4th, 2001, Univ. of Tokyo, Japan "Real-time observation of surface morphology at nanometer scale with using x-ray specular reflection", T. Kawamura, Y. Watanabe, S. Fujikawa, S. Bhunia, K. Uchida, J. Matsui, Y. Kagoshima and Y.Tsusaka, 3rd International Symposium on Atomic Level Characterizations for New Materials and Devices Nov 11th - 14th, 2001, Nara, Japan “Analysis of temperature dependent rocking curves of GaInP/GaAs heterostructures”, S. Bhunia, T. Kawamura, Y. Watanabe, S. Fujikawa, K. Uchida, J. Matsui, Y. Kagoshima, Y. Tsusaka, Jap. Appl. Phys. Soc. Conf., September 2002, Niigata, Japan “In-situ characterization of surface morphology on MOVPE grown InP”, T. Kawamura, Y. Watanabe, S. Bhunia, S. Fujikawa, K. Tokushima, J. Matsui, Y. Kagoshima, Y. Tsusaka, ibid “Analysis of InP (001)-p(2x1) surface structures with the use of Patterson maps”, S. Fujikawa, T. Kawamura, Y. Watanabe, S. Bhunia, K. Tokushima, Y. Tsusaka, Y. Kagoshima, J. Matsui, ibid “In situ characterization of MOVPE films using undulator x-ray source – Real-time control of GaInP/GaAs growth”, S. Bhunia, T. Kawamura, S. Fujikawa, Y. Watanabe, K. Uchida, N. Sugiyama, M. Furiya, S. Nozaki, H. Morisaki, J. Matsui, Y. Kagoshima, Y. Tsusaka, Jap. Appl. Phys. Soc. Conf., March 2002, Kanagawa, Japan “In situ characterization of MOVPE films using undulator x-ray source – Chemisorption of P atoms on InP”, Y. Watanabe, T. Kawamura, S. Bhunia, S. Fujikawa, K. Uchida, K. Tokushima, J. Matsui, Y. Kagoshima, Y. Tsusaka, ibid “In situ characterization of MOVPE films using undulator x-ray source – Real-time analysis of surface structure domain with fractional order diffraction during InP growth”, S. Fujikawa, T. Kawamura, Y. Watanabe, S. Bhunia, K. Uchida, K. Tokushima, Y. Tsusaka, Y. Kagoshima, J. Matsui, ibid “In situ characterization of MOVPE films using undulator x-ray source – Step structure of InP (001) with using x-ray scattering”, T. Kawamura, Y. Watanabe, S. Bhunia, S. Fujikawa, K. Uchida, K. Tokushima, J. Matsui, Y. Kagoshima, Y. Tsusaka, ibid “Characterization of MOVPE films using undulator x-ray source (I) – Initial growth mechanism of homoepitaxial InP(001) by using x-ray reflectivity technique”, T. Kawamura, Y. Watanabe, S. Bhunia, S. Fujikawa, K. Uchida, J. Matsui, Y. Kagoshima, and Y. Tsusaka. Jap. Appl. Phys. Conf., Sept, 2001, Nagoya, Japan  “Characterization of MOVPE films using undulator x-ray source (II) – Real-time observation of growth modes during metal organic vapor phase epitaxy of InP” , S. Bhunia, T. Kawamura, Y. Watanabe, S. Fujikawa, K. Uchida, H. Morisaki, J. Matsui, Y. Kagoshima, Y. Tsusaka, ibid “Characterization of MOVPE films using undulator x-ray source (IV) – Characterization of lattice matched GaInP/GaAs using multi energy x-ray diffraction”, K. Uchida, S. Bhunia, T. Kawamura, Y. Watanabe, S. Fujikawa, H. Morisaki, J. Matsui, Y. Kagoshima, Y. Tsusaka, ibid “Growth and characterization of Si doped GaInP and carbon doped GaAs epilayers by MOCVD for the fabrication of a heterostructure bipolar transistor”, S. Bhunia, M. Furiya, N. Sugiyama, T. Ikegami, K. Uchida, S. Nozaki and H. Morisaki, SVBL Ann. Rep. 2001, Univ. Electro-Communications, Tokyo “Optimization of growth of InGaAs/InP quantum wells using photoluminescence (PL) and secondary ion mass spectroscopy (SIMS)”, S. Bhunia et. al. The 5th Int. Union of Mat. Res. Soc - Int. Conf. in Asia, 1998, Bangalore, India “Positron annihilation studies on Si-GaAs, InP and ZnTe”, P. Banerji, S. Bhunia, D. Banerjee and D.N. Bose, ibid “Schottky barrier study and determination of interface index of Bridgman grown p-ZnTe”, S. Bhunia and D.N. Bose, ibid