Due to the unique band topology, these materials are the subject of considerable research interest for understanding the relativistic phenomenon in tabletop experiment. Apart from fundamental interest, the exotic transport properties of these materials such as giant magnetoresistance (i.e., change in resistivity with magnetic field) and ultra-high carrier mobility are equally compelling for technological application. Indeed, a new terminology “Topotronics” has been coined for possible applications of these materials as electronic devices such as sensors, magnetic switch, memory devices, high efficient low-power electronics, spintronic systems, quantum computation, high thermoelectric figure of merit, etc. For applications, however, the material should show linear energy-momentum dispersion over a wide range of energy so that its unique transport properties can be exploited efficiently. Only ZrSiS is found to exhibit linear dispersion up to as high as 2 eV [L. M. Schoop, et al.

A team of researcher at SINP [Ratnadwip Singha, Arnab Kumar Pariari, Biswarup Satpati and Prabhat Mandal], has grown very high quality single crystals of ZrSiS and measured magnetotransport properties to understand both the technological importance and electronic band structure of this material. The work has been recently published in Proceedings of the National Academy of Sciences [PNAS 114(10), 2468 (2017) | DOI: 10.1073/pnas.1618004114].

Fig. 1 (A) ZrSiS single crystal with different crystallographic directions. (B) Selected area electron diffraction pattern obtained in HRTEM.

The single crystals used in this work has been grown via chemical vapor transport technique and characterized using high-resolution transmission electron microscopy (HRTEM) [Fig.1]. The transport properties have been measured over a wide temperature range (300–2 K) in presence of magnetic field. With magnetic field (

On the other hand, an increase in conductivity with the increase in field strength has been seen for

Fig. 2 Transverse magnetoresistance with current along the

Due to the formation of Landau levels, the field dependence of resistivity is accompanied by quantum oscillations [Fig. 3(A) and Fig. 3(B)], which have been analyzed to obtain information on Fermi surface. The non-trivial p Berry’s phase acquired by the charge carriers due to cyclotron orbit around the Dirac nodes has been calculated from the Landau level index plot [Fig. 3(C)]. Through this detection of non-trivial Berry’s phase and observation of enhanced magneto-conductance in

Fig. 3 (A) and (B) Two independent Quantum oscillations, obtained by subtracting the smooth background from the field dependence of resistivity. Insets show the corresponding Fourier transformed spectrum results. (C) Landau-level index plot showing the intercept ~ 0.15, which is very close to the value zero corresponds to non-trivial pi Berry’s phase.