The influence of alkyl side-chain length [CnH2n+1 (A), where n = 6 (hexyl), 8 (octyl), 12 (dodecyl)] and thermal annealing (TA) and the definite roles of these in the quantity and quality of π-stacked crystallinity and edge-on orientated (EO) ordering of spin-coated poly(3-alkylthiophene) [P3AT] thin films, which are of massive significance in their optoelectronic properties, were investigated using complementary optical absorption spectroscopy and X-ray reflectivity (XR) techniques. The energy-band diagram, corresponding to the vibronic levels, obtained from the optical absorption spectrum provides information about the percentage, planarity, local order, and average conjugation length of the crystalline aggregates, while the electron density profile obtained from the XR provides unique information about the EO ordering and its variation along the depth. A prominent EO ordering near the substrate with a gradually decreased ordering toward the top surface is observed in each film. An as-cast P3HT film of shorter side chain (having a natural nucleation tendency and rigidity) shows a slightly higher crystallinity and weaker excitonic coupling, while as-cast P3DDT film (having longer side-chain flexibility) shows a slightly better EO ordering. After the TA, the planarity of the unfolded backbone improves in each film; however, the effect is maximum in the P3DDT film. The EO ordering also improves throughout the film (by a thermal energy-induced reorientation of crystallites) but more toward the top surface (by increasing the decay length), preserving the exponential decay nature. The P3HT film (with the better initial crystallinity and planarity) shows an appreciable improvement, while the P3DDT film (where the crystallinity increases and crystallites have a better reorientational ability) shows the maximum improvement in the EO ordering. The improvement of the crystallinity (in quantity and quality) and the EO ordering of P3AT in thin films (as active layers), especially near the film−substrate interfaces, are of immense importance for their better in-plane charge carrier mobility in a thin-film transistor.